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LZ23H3V1
LZ23H3V1
DESCRIPTION
The LZ23H3V1 is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices). With approximately 1 090 000 pixels (1 217 horizontal x 893 vertical), the sensor provides a stable highresolution color image.
1/3-type Interline Color CCD Area Sensor with 1 090 k Pixels
* Built-in overflow drain voltage circuit and reset gate voltage circuit * Variable electronic shutter * Package : 16-pin shrink-pitch WDIP [Ceramic] (WDIP016-N-0500C) Row space : 12.70 mm
FEATURES
* Optical size : Number of effective pixels - Approx. 1 000 k; 6.6 mm - Approx. 790 k; 5.9 mm (compatible with XGA format)
1 000 k pixels
PIN CONNECTIONS
16-PIN SHRINK-PITCH WDIP TOP VIEW
OD 1 GND 2 OFD 3 PW 4
16 OS 15 GND 14 OV1A 13 OV1B 12 OV2 11 OV3A 10 OV3B 9 OV4
(5.9 mm) 790 k pixels
6.6 mm (768) 866 ORS 5 NC 6 OH1 7 OH2 8
(1 024) 1 156
* * * *
*
* * * * * * *
Interline scan format Square pixel Number of effective pixels : 1 174 (H) x 884 (V) Number of optical black pixels - Horizontal : 3 front and 40 rear - Vertical : 7 front and 2 rear Number of dummy bits - Horizontal : 22 - Vertical : 2 Pixel pitch : 4.6 m (H) x 4.6 m (V) R, G, and B primary color mosaic filters Supports monitoring mode Low fixed-pattern noise and lag No burn-in and no image distortion Blooming suppression structure Built-in output amplifier
(WDIP016-N-0500C)
PRECAUTIONS
* The exit pupil position of lens should be 15 to 50 mm from the top surface of the CCD. * Refer to "PRECAUTIONS FOR CCD AREA SENSORS" for details.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
LZ23H3V1
PIN DESCRIPTION
SYMBOL OD OS ORS OV1A, OV1B, OV2, OV3A, OV3B, OV4 OH1, OH2 OFD PW GND NC PIN NAME Output transistor drain Output signals Reset transistor clock Vertical shift register clock Horizontal shift register clock Overflow drain P-well Ground No connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER Output transistor drain voltage Overflow drain voltage Reset gate clock voltage Vertical shift register clock voltage Horizontal shift register clock voltage Voltage difference between P-well and vertical clock Voltage difference between vertical clocks Storage temperature Ambient operating temperature SYMBOL VOD VOFD VORS VOV VOH VPW-VOV VOV-VOV TSTG TOPR RATING 0 to +18 Internal output Internal output VPW to +18 -0.3 to +12 -29 to 0 0 to +15 -40 to +85 -20 to +70
(TA = +25 C)
UNIT V V V V V V V C C 3 NOTE 1 2
NOTES :
1. Do not connect to DC voltage directly. When OFD is connected to GND, connect VOD to GND. Overflow drain clock is applied below 27 Vp-p. 2. Do not connect to DC voltage directly. When ORS is connected to GND, connect VOD to GND. Reset gate clock is applied below 8 Vp-p. 3. When clock width is below 10 s, and clock duty factor is below 0.1%, voltage difference between vertical clocks will be below 28 V.
2
LZ23H3V1
RECOMMENDED OPERATING CONDITIONS
PARAMETER Ambient operating temperature Output transistor drain voltage Overflow drain clock p-p level Ground P-well voltage LOW level Vertical shift register clock INTERMEDIATE level HIGH level Horizontal shift register clock LOW level HIGH level SYMBOL TOPR VOD VOOFD GND VPW VOV1AL, VOV1BL, VOV2L VOV3AL, VOV3BL, VOV4L VOV1AI, VOV1BI, VOV2I VOV3AI, VOV3BI, VOV4I VOV1AH, VOV1BH VOV3AH, VOV3BH VOH1L, VOH2L VOH1H, VOH2H VORS fOV1A, fOV1B, fOV2 fOV3A, fOV3B, fOV4 fOH1, fOH2 fORS MIN. 14.55 24.5 0.0 -10.0 -9.5 -9.0 0.0 14.55 -0.05 4.5 4.5 15.0 0.0 5.0 5.0 10.88 13.47 14.32 18.00 14.32 18.00 15.45 0.05 5.5 5.5 VOVL -8.5 TYP. 25.0 15.0 MAX. 15.45 26.5 UNIT C V V V V V V V V V V kHz kHz MHz MHz MHz MHz 1 3 4 3 4 3 4 1 2 NOTE
Reset gate clock p-p level Vertical shift register clock frequency Horizontal shift register clock frequency Reset gate clock frequency
NOTES :
1. Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly. 2. VPW is set below VOVL that is low level of vertical shift register clock, or is used with the same power supply that is connected to VL of V driver IC. 3. Operation frequency is 14.32 MHz. 4. Operation frequency is 18.00 MHz. * To apply power, first connect GND and then turn on VOD. After turning on VOD, turn on PW first and then turn on other powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.
3
LZ23H3V1
CHARACTERISTICS (Drive method : 1/30 s frame accumulation)
(TA = +25 C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER Standard output voltage Photo response non-uniformity Saturation output voltage Dark output voltage Dark signal non-uniformity Sensitivity (green channel) Smear ratio Image lag Blooming suppression ratio Output transistor drain current Line crawling SYMBOL VO PRNU VSAT VDARK DSNU R SMR AI ABL IOD LCR 500 4.0 8.0 3.0 mA % 12 105 450 330 530 410 0.5 0.5 150 -75 3.0 2.0 -65 1.0 MIN. TYP. 150 MAX. 10 UNIT mV % mV mV mV mV mV dB % NOTE 2 3 4 5 1, 6 1, 7 8 9 10 11
NOTES :
* Within the recommended operating conditions of VOD, VOFD of the internal output satisfies with ABL larger than 500 times exposure of the standard exposure conditions, and VSAT larger than 330 mV. 1. TA = +60 C 2. The average output voltage of G signal under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax - Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. VSAT is the minimum segment's voltage under 10 times exposure of the standard exposure conditions. The operation of OFDC is high. (for still image capturing) 5. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. VSAT is the minimum segment's voltage under 10 times exposure of the standard exposure conditions. The operation of OFDC is low. 6. The average output voltage under non-exposure conditions. 7. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax - Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 8. The average output voltage of G signal when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 9. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 10. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 11. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. 12. The sensor is exposed at the exposure level corresponding to the standard conditions. LCR is defined by (VG/VO) x 100, where VG is the difference between the average output voltage of G signal at the 1st field, and that of G signal at the 2nd field.
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LZ23H3V1
PIXEL STRUCTURE
OPTICAL BLACK (3 PIXELS)
yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,,
OPTICAL BLACK (2 PIXELS) 1 174 (H) x 884 (V) 1 pin OPTICAL BLACK (7 PIXELS)
OPTICAL BLACK (40 PIXELS)
COLOR FILTER ARRAY
(1, 884) (1 174, 884)
Pin arrangement of the vertical readout clock
OV3B OV1A OV3A OV1B OV3B OV1A
G R G R G R
B G B G B G
G R G R G R
B G B G B G
G R G R G R
B G B G B G
G R G R G R
B G B G B G
G R G R G R
B G B G B G
OV3A OV1B OV3B OV1A OV3A OV1B (1, 1)
G R G R G R
B G B G B G
G R G R G R
B G B G B G
G R G R G R
B G B G B G
G R G R G R
B G B G B G
G R G R G R
B G B G B G
(1 174, 1)
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LZ23H3V1
TIMING CHART
TIMING CHART EXAMPLE
Pulse diagram in more detail is shown in the figure q to t after next page. Field accumulation mode Frame accumulation Frame accumulation mode mode at first q q w e r e' Field accumulation mode at first t Field accumulation mode q
VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD
(at OFD shutter operation)
OFDC OS
(Number of vertical line)
Field accumulation mode
(2.3..882.883) (2.3..882.883)
Not for use (NOTE 1)
Not for use (NOTE 1)
Frame accumulation mode
(2.4..882.884) (1.3..881.883)
Not for use Field accumulation (NOTE 2) mode (2.3..882.883)
NOTES :
1. Do not use these signals immediately after field accumulation mode is transferred to frame accumulation mode for still image capturing. 2. Do not use these signals immediately after frame accumulation mode is transferred to field accumulation mode for monitoring mode image. * Apply at least an OFD shutter pulse to OFD in each field accumulation mode.
q VERTICAL TRANSFER TIMING FOR 14.3 MHz OPERATION FIELD ACCUMULATION MODE
453 1 HD VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD OFDC OS
874 875 878 879 882 883 OB2 GB RG GB RG GB RG OB1 OB2 OB5 OB6 2 3 6 7 10 11 14 15 18 19 GB RG GB RG GB RG GB RG GB RG
6
10
Shutter speed 1/1 000 s
* Do not use the field signals immediately after frame accumulation mode is transferred to field accumulation mode.
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LZ23H3V1
w VERTICAL TRANSFER TIMING FOR 14.3 MHz OPERATION FRAME ACCUMULATION MODE AT FIRST
453 1 HD VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD OFDC OS
874 875 878 879 882 883 OB2 GB RG GB RG GB RG
6
10
Shutter speed 1/1 000 s
Not for use
* Do not use the frame signals immediately after field accumulation is transferred to frame accumulation mode.
(2nd FIELD)
HD VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD OFDC OS e
e, e' VERTICAL TRANSFER TIMING FOR 14.3 MHz OPERATION FRAME ACCUMULATION MODE
453 454 459 463
Not for use OS e'
872 874 876 878 880 882 884 OB2 GB GB GB GB GB GB GB OB2 OB4 OB6
Not for use
1 3 5 7 9 11 13 15 17 19 RG RG RG RG RG RG RG RG RG RG
* Do not use the frame signals immediately after field accumulation mode is transferred to frame accumulation mode.
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LZ23H3V1
(1st FIELD)
HD VD OV1A OV1B OV2 OV3A OV3B OV4
r VERTICAL TRANSFER TIMING FOR 14.3 MHz OPERATION FRAME ACCUMULATION MODE
900 906 1 6 10
Charge swept transfer (658 stages) OOFD OFDC
OB1 OB3 OB5 OB7
OS Not for use
2 4 6 8 10 12 14 GB GB GB GB GB GB GB
* Do not use the frame signals immediately after field accumulation mode is transferred to frame accumulation mode.
t VERTICAL TRANSFER TIMING FOR 14.3 MHz OPERATION FIELD ACCUMULATION MODE AT FIRST
906 1 HD VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD OFDC OS
873 875 877 879 881 883 OB1 RG RG RG RG RG RG
6
10
Shutter speed 1/1 000 s
Not for use
* Do not use the field signals immediately after frame accumulation mode is transferred to field accumulation mode.
8
LZ23H3V1
READOUT TIMING FOR 14.3 MHz OPERATION FIELD ACCUMULATION MODE
1316, 1 HD OV1A 48 80 132 588 392 536 660 1316, 1
OV1B 64 96 OV2 436 OV3A 40 88 384 508 544 408 552
OV3B 56 104 OV4 30.5 s (436 bits) 41.1 s (588 bits) 5.03 s (72 bits) 400 560
5.03 s (72 bits)
91.9 s (1 316 bits)
READOUT TIMING FOR 14.3 MHz OPERATION FRAME ACCUMULATION MODE AT FIRST
1316, 1 HD 48 80 132 588 OV1A 392 536 660 1316, 1
OV1B 64 96 OV2 436 OV3A 40 88 384 508 544 408 552
OV3B 56 104 OV4 30.5 s (436 bits) 41.1 s (588 bits) 5.03 s (72 bits) 400 560
5.03 s (72 bits)
91.9 s (1 316 bits)
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LZ23H3V1
READOUT TIMING FOR 14.3 MHz OPERATION FRAME ACCUMULATION MODE (1st FIELD)
1 HD OV1A OV1B OV2 OV3A OV3B OV4 48 64 476 548 40 56 33.2 s (476 bits) 1 HD 476 548 OV1A OV1B OV2 OV3A OV3B OV4 48 80 64 96 40 88 56 104 5.03 s (72 bits) 48 80 64 96 40 88 56 104 132 5.03 s (72 bits) 1316, 1 88 104 80 96 132 1316, 1
(2nd FIELD)
33.2 s (476 bits)
HORIZONTAL TRANSFER TIMING FOR 14.3 MHz OPERATION
HD OH1 OH2 ORS OS ..1174 OV1A OV1B OV2 OV3A OV3B OV4 72 OOFD 92 40 56 88 104 OB (40) 48 64 80 96 PRE SCAN (22) OB (3) OUTPUT (1 174) 1 1316, 1 40 117.5 132
10
LZ23H3V1
CHARGE SWEPT TRANSFER TIMING FOR 14.3 MHz OPERATION
900H 1 HD OV1A OV1B OV2 OV3A OV3B OV4 1 2 3 4
*******
901H 902H 132
*****
905H 906H 1H 2H 3H 4H 5H 6H 1316 1306 1312 1306 1312 656 657 658
2 8 2 8
14 26 38 50 20 32 44 14 26 38 50 20 32 44
q VERTICAL TRANSFER TIMING FOR 18.0 MHz OPERATION FIELD ACCUMULATION MODE
442 HD VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD OFDC OS
858 859 862 863 866 867 870 871 874 875 878 879 882 883 OB2 GB RG GB RG GB RG GB RG GB RG GB RG GB RG OB1 OB2 OB5 OB6 2 3 6 7 10 11 GB RG GB RG GB RG
449 1
6
10
Shutter speed 1/1 000 s
* Do not use the field signals immediately after frame accumulation mode is transferred to field accumulation mode.
11
LZ23H3V1
w VERTICAL TRANSFER TIMING FOR 18.0 MHz OPERATION FRAME ACCUMULATION MODE AT FIRST
442 HD VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD OFDC OS
858 859 862 863 866 867 870 871 874 875 878 879 882 883 OB2 GB RG GB RG GB RG GB RG GB RG GB RG GB RG
449 1
6
10
Shutter speed 1/1 000 s
Not for use
* Do not use the field signals immediately after frame accumulation mode is transferred to field accumulation mode.
(2nd FIELD)
HD VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD OFDC OS e OS e'
e, e' VERTICAL TRANSFER TIMING FOR 18.0 MHz OPERATION FRAME ACCUMULATION MODE
449 450 455 459
Not for use
856 858 860 862 864 866 868 870 872 874 876 878 880 882 884 OB2 GB GB GB GB GB GB GB GB GB GB GB GB GB GB GB OB2 OB4 OB6
Not for use
1 3 5 7 9 11 RG RG RG RG RG RG
* Do not use the field signals immediately after frame accumulation mode is transferred to field accumulation mode.
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LZ23H3V1
(1st FIELD)
HD VD OV1A OV1B OV2 OV3A OV3B OV4
r VERTICAL TRANSFER TIMING FOR 18.0 MHz OPERATION FRAME ACCUMULATION MODE
888 898 1 6 10
Charge swept transfer (668 stages) OOFD OFDC
OB1 OB3 OB5 OB7
OS Not for use
2 4 6 8 GB GB GB GB
* Do not use the frame signals immediately after field accumulation mode is transferred to frame accumulation mode.
t VERTICAL TRANSFER TIMING FOR 18.0 MHz OPERATION FIELD ACCUMULATION MODE AT FIRST
898 1 HD VD OV1A OV1B OV2 OV3A OV3B OV4 OOFD OFDC OS
857 859 861 863 865 867 869 871 873 875 877 879 881 883 OB1 RG RG RG RG RG RG RG RG RG RG RG RG RG RG
6
10
Shutter speed 1/1 000 s
Not for use
* Do not use the field signals immediately after frame accumulation mode is transferred to field accumulation mode.
13
LZ23H3V1
READOUT TIMING FOR 18.0 MHz OPERATION FIELD ACCUMULATION MODE
1336, 1 HD OV1A OV1B 70 110 OV2 OV3A OV3B OV4 60 120 490 5.00 s 29.7 s (535 bits) (90 bits) 5.00 s (90 bits) 74.2 s (1336 bits) 690 40 100 470 535 625 670 500 680 50 90 132 480 660 725 815 1336, 1
41.1 s (588 bits)
READOUT TIMING FOR 18.0 MHz OPERATION FRAME ACCUMULATION MODE AT FIRST
1336, 1 HD OV1A OV1B 70 110 OV2 OV3A OV3B OV4 60 120 490 5.00 s 29.7 s (535 bits) (90 bits) 5.00 s (90 bits) 74.2 s (1 336 bits) 690 40 100 470 535 625 670 500 680 50 90 132 480 660 725 815 1336, 1
41.1 s (588 bits)
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LZ23H3V1
READOUT TIMING FOR 18.0 MHz OPERATION FRAME ACCUMULATION MODE (1st FIELD)
1 HD OV1A OV1B OV2 OV3A OV3B OV4 40 60 5.00 s 32.5 s (585 bits) 1 HD OV1A OV1B OV2 OV3A OV3B OV4 5.00 s 32.5 s (585 bits) (90 bits) 40 100 60 120 40 100 60 120 50 90 70 110 132 585 675 585 675 100 120 50 70 90 110 132 1336, 1
(2nd FIELD)
(90 bits) 1336, 1 50 90 70 110
HORIZONTAL TRANSFER TIMING FOR 18.0 MHz OPERATION
HD OH1 OH2 ORS OS ..1174 OV1A OV1B OV2 OV3A OV3B OV4 80 OOFD 105 40 60 100 120 OB (40) 50 70 90 110 1336, 1 40 132 137.5
PRE SCAN (22) OB (3) OUTPUT (1 174) 1
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LZ23H3V1
CHARGE SWEPT TRANSFER TIMING FOR 18.0 MHz OPERATION
888H 1 HD OV1A OV1B OV2 OV3A OV3B OV4 1 2 3 4
*******
889H 890H 132
*****
897H 898H 1H
2H
3H
4H
5H 6H 1336 1322 1330 1322 1330
2
18 34 50 66 10 26 42 58
2
18 34 50 66 10 26 42 58 666 667
668
16
VOD
+ 18 k$ 5.6 k$ 100 $ 0. 47 F 1 M$ 270 pF
OFDC
0. 01 F 1 M$
ORS OH1
OH2 VL (VPW)
+
VH
SYSTEM CONFIGURATION EXAMPLE
+ ORS V4 V2 VL V1A V1B V3A V3B OH2 OH1 OFD POFD GND
+3.3 V V3X VH1AX V1X V2X OFDX VH3BX VOFDH
+
17
12 11 10 9 8 7 6 5 4 3 2 1 8
13 14 15 16 17 18 19 20 21 22 23 24
V4X + V3X V1X V2X VDD GND VOFDH VH1BX VH3AX VH1AX VH3BX OFDX
VMa
VMb
OD
PW
LR36685
9
NC
NC
VH OV4
7
6
5
(*1)
4
3
(*1)
2
1
LZ23H3V1
10 11 12 13 14 15 16
OS OV2 OV3A OV3B OV1B OV1A GND
VH1BX CCD OUT
V4X VH3AX
(*1) ORS, OFD : Use the circuit parameter indicated in this circuit example, and do not connect to DC voltage directly.
LZ23H3V1
PACKAGES FOR CCD AND CMOS DEVICES
PACKAGE
16 WDIP (WDIP016-N-0500C)
0.600.60 7.000.15 1.400.60 16 Center of effective imaging area and center of package ( : Lid's size) 9 1.660.10 CCD Package (Cerdip) Glass Lid
(Unit : mm)
6.200.15
11.200.10 ()
CCD
12.400.15
0.04 Cross Section A-A'
1 11.200.10 () 3.420.25 2.600.20 14.000.15
8
Rotation error of die : = 1.5MAX. 0.800.05 () 0.250.10 12.700.25
1.270.25
A
5.24MAX.
3.900.30
P-1.78TYP. 0.46TYP. 0.90TYP.
A' 0.25 M
2.63TYP.
18
1.05MIN.
PRECAUTIONS FOR CCD AREA SENSORS
PRECAUTIONS FOR CCD AREA SENSORS 1. Package Breakage
In order to prevent the package from being broken, observe the following instructions : 1) The CCD is a precise optical component and the package material is ceramic or plastic. Therefore, o Take care not to drop the device when mounting, handling, or transporting. o Avoid giving a shock to the package. Especially when leads are fixed to the socket or the circuit board, small shock could break the package more easily than when the package isn't fixed. 2) When applying force for mounting the device or any other purposes, fix the leads between a joint and a stand-off, so that no stress will be given to the jointed part of the lead. In addition, when applying force, do it at a point below the stand-off part. (In the case of ceramic packages) - The leads of the package are fixed with low melting point glass, so stress added to a lead could cause a crack in the low melting point glass in the jointed part of the lead.
Low melting point glass Lead
(In the case of plastic packages) - The leads of the package are fixed with package body (plastic), so stress added to a lead could cause a crack in the package body (plastic) in the jointed part of the lead.
Glass cap Package Lead Fixed
Stand-off
3) When mounting the package on the housing, be sure that the package is not bent. - If a bent package is forced into place between a hard plate or the like, the package may be broken. 4) If any damage or breakage occurs on the surface of the glass cap, its characteristics could deteriorate. Therefore, o Do not hit the glass cap. o Do not give a shock large enough to cause distortion. o Do not scrub or scratch the glass surface. - Even a soft cloth or applicator, if dry, could cause dust to scratch the glass.
2. Electrostatic Damage
Fixed
Stand-off
As compared with general MOS-LSI, CCD has lower ESD. Therefore, take the following anti-static measures when handling the CCD : 1) Always discharge static electricity by grounding the human body and the instrument to be used. To ground the human body, provide resistance of about 1 M$ between the human body and the ground to be on the safe side. 2) When directly handling the device with the fingers, hold the part without leads and do not touch any lead.
19
PRECAUTIONS FOR CCD AREA SENSORS
3) To avoid generating static electricity, a. do not scrub the glass surface with cloth or plastic. b. do not attach any tape or labels. c. do not clean the glass surface with dustcleaning tape. 4) When storing or transporting the device, put it in a container of conductive material. o The contamination on the glass surface should be wiped off with a clean applicator soaked in Isopropyl alcohol. Wipe slowly and gently in one direction only. - Frequently replace the applicator and do not use the same applicator to clean more than one device. Note : In most cases, dust and contamination are unavoidable, even before the device is first used. It is, therefore, recommended that the above procedures should be taken to wipe out dust and contamination before using the device.
3. Dust and Contamination
Dust or contamination on the glass surface could deteriorate the output characteristics or cause a scar. In order to minimize dust or contamination on the glass surface, take the following precautions : 1) Handle the CCD in a clean environment such as a cleaned booth. (The cleanliness level should be, if possible, class 1 000 at least.) 2) Do not touch the glass surface with the fingers. If dust or contamination gets on the glass surface, the following cleaning method is recommended : o Dust from static electricity should be blown off with an ionized air blower. For antielectrostatic measures, however, ground all the leads on the device before blowing off the dust.
4. Other
1) Soldering should be manually performed within 5 seconds at 350 C maximum at soldering iron. 2) Avoid using or storing the CCD at high temperature or high humidity as it is a precise optical component. Do not give a mechanical shock to the CCD. 3) Do not expose the device to strong light. For the color device, long exposure to strong light will fade the color of the color filters.
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